Stacking of adjacent graphene layers grown on C-face SiC
نویسندگان
چکیده
منابع مشابه
Multiple π-bands and Bernal stacking of multilayer graphene on C-face SiC, revealed by nano-Angle Resolved Photoemission
Only a single linearly dispersing π-band cone, characteristic of monolayer graphene, has so far been observed in Angle Resolved Photoemission (ARPES) experiments on multilayer graphene grown on C-face SiC. A rotational disorder that effectively decouples adjacent layers has been suggested to explain this. However, the coexistence of μm-sized grains of single and multilayer graphene with differe...
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متن کاملFirst direct observation of a nearly ideal graphene band structure.
Angle-resolved photoemission and x-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(0001) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational stacking of these films causes adjacent graphene layers to electronically decouple leading to a set of nearly independent linearly dispersing bands (Dirac cone...
متن کاملCORRIGENDUM: Multiple π-bands and Bernal stacking of multilayer graphene on C-face SiC, revealed by nano-Angle Resolved Photoemission
The authors neglected to cite a related study that reports an ARPES experiment indicating the presence of multiple p bands in multilayer graphene on C-face SiC. 1 This is given below as Reference 1. In the present Article, nano-ARPES band mappings of individual graphene grains unambiguously show that multilayer C-face graphene exhibits multiple p-bands.
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تاریخ انتشار 2011